IRG8CH42K10F
Infineon Technologies
Infineon Technologies
IGBT 1200V 40A DIE
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Experience top-tier performance with the IRG8CH42K10F Single IGBT transistor from Infineon Technologies. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the IRG8CH42K10F ensures energy efficiency and reliability. Trust Infineon Technologies's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 230 nC
- Td (on/off) @ 25°C: 40ns/240ns
- Test Condition: 600V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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