IRG8P15N120KD-EPBF
Infineon Technologies
Infineon Technologies
IGBT 1200V 30A TO247AD
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The IRG8P15N120KD-EPBF Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IRG8P15N120KD-EPBF ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IRG8P15N120KD-EPBF into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
- Power - Max: 125 W
- Switching Energy: 600µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 98 nC
- Td (on/off) @ 25°C: 15ns/170ns
- Test Condition: 600V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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