IRGI4045DPBF
Infineon Technologies
Infineon Technologies
IGBT 600V 11A 33W TO220ABFP
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Optimize your power systems with the IRGI4045DPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IRGI4045DPBF delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 11 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
- Power - Max: 33 W
- Switching Energy: 64µJ (on), 123µJ (off)
- Input Type: Standard
- Gate Charge: 13 nC
- Td (on/off) @ 25°C: 26ns/73ns
- Test Condition: 400V, 6A, 47Ohm, 15V
- Reverse Recovery Time (trr): 73 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220AB Full-Pak
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