IRGP4760D-EPBF
Infineon Technologies
Infineon Technologies
IGBT 650V TO-247
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Enhance your electronic projects with the IRGP4760D-EPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IRGP4760D-EPBF ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IRGP4760D-EPBF for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): 144 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
- Power - Max: 325 W
- Switching Energy: 1.7mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 145 nC
- Td (on/off) @ 25°C: 70ns/140ns
- Test Condition: 400V, 48A, 10Ohm, 15V
- Reverse Recovery Time (trr): 170 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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