IRGS6B60KDPBF
Infineon Technologies

Infineon Technologies
IGBT 600V 13A 90W D2PAK
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Reference Price (USD)
300+
$1.89107
Exquisite packaging
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Enhance your electronic projects with the IRGS6B60KDPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IRGS6B60KDPBF ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IRGS6B60KDPBF for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 13 A
- Current - Collector Pulsed (Icm): 26 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
- Power - Max: 90 W
- Switching Energy: 110µJ (on), 135µJ (off)
- Input Type: Standard
- Gate Charge: 18.2 nC
- Td (on/off) @ 25°C: 25ns/215ns
- Test Condition: 400V, 5A, 100Ohm, 15V
- Reverse Recovery Time (trr): 70 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK