IRL3705NS
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 89A D2PAK
$0.00
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Reference Price (USD)
200+
$2.89995
Exquisite packaging
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Meet the IRL3705NS by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRL3705NS stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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