IRLB8314PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 171A TO220-3
$1.19
Available to order
Reference Price (USD)
1+
$1.02000
10+
$0.90900
100+
$0.72850
500+
$0.57570
1,000+
$0.46461
Exquisite packaging
Discount
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Enhance your electronic projects with the IRLB8314PBF single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IRLB8314PBF for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 68A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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