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IRLBD59N04ETRLP

Infineon Technologies
IRLBD59N04ETRLP Preview
Infineon Technologies
MOSFET N-CH 40V 59A TO263-5
$0.00
Available to order
Reference Price (USD)
800+
$1.22181
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-5
  • Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA

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