IRLHM630TR2PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 21A PQFN
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Enhance your electronic projects with the IRLHM630TR2PBF single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IRLHM630TR2PBF for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (3x3)
- Package / Case: 8-VQFN Exposed Pad
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