IRLR8729PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 58A D-PAK
$0.00
Available to order
Reference Price (USD)
1+
$0.88000
10+
$0.77800
100+
$0.60660
500+
$0.48838
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IRLR8729PBF single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IRLR8729PBF for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPI070N08N3 G
Infineon Technologies
IPB260N06N3GATMA1
STMicroelectronics
STD90N02L-1
Infineon Technologies
IRFHM8337TRPBF
onsemi
NVMFS5C646NLT1G
Nexperia USA Inc.
2N7002F,215
Vishay Siliconix
SI8405DB-T1-E1
Infineon Technologies
SPP16N50C3
Infineon Technologies
BSP92P E6327
Nexperia USA Inc.