IS43DR86400C-3DBI
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT PARALLEL 60TWBGA
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The IS43DR86400C-3DBI from ISSI, Integrated Silicon Solution Inc is a high-performance Memory IC designed for modern electronic applications. This integrated circuit offers exceptional data storage and retrieval capabilities, making it ideal for devices requiring fast and reliable memory solutions. With advanced technology and robust construction, the IS43DR86400C-3DBI ensures longevity and consistent performance in various environments.
Memory ICs like the IS43DR86400C-3DBI are essential components in today's digital world, providing the necessary storage for data-intensive operations. These ICs feature low power consumption, high-speed access, and compact designs, catering to the growing demand for efficient memory solutions. Whether used in consumer electronics or industrial systems, the IS43DR86400C-3DBI delivers unmatched reliability and efficiency.
The IS43DR86400C-3DBI is widely used in applications such as smartphones, tablets, computers, and automotive systems. For instance, it can be found in smart devices where quick data access is crucial, or in automotive control units that require durable and high-speed memory. Its versatility and performance make it a top choice for engineers and designers looking for premium Memory ICs.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450 ps
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
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