IS43DR86400E-25DBLI
ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT PARALLEL 60TWBGA
$5.89
Available to order
Reference Price (USD)
1+
$7.20000
10+
$6.62400
25+
$6.48600
50+
$6.46300
242+
$5.79798
484+
$5.62217
726+
$5.34698
1,210+
$5.15970
Exquisite packaging
Discount
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Experience top-tier performance with the IS43DR86400E-25DBLI Memory IC from ISSI, Integrated Silicon Solution Inc, a standout in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the requirements of advanced electronic systems. Its innovative architecture ensures efficiency and reliability.
The IS43DR86400E-25DBLI exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The IS43DR86400E-25DBLI provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The IS43DR86400E-25DBLI is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400 ps
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)