IS61DDB21M18A-300B4L
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
IC SRAM 18MBIT PARALLEL 165LFBGA
$32.38
Available to order
Reference Price (USD)
144+
$30.14549
Exquisite packaging
Discount
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Discover the IS61DDB21M18A-300B4L Memory IC by ISSI, Integrated Silicon Solution Inc, a cutting-edge solution for your data storage needs. This IC is part of the Memory category, known for its high-density storage and rapid data transfer rates. The IS61DDB21M18A-300B4L is engineered to meet the demands of advanced electronic systems, offering superior performance and energy efficiency.
Memory ICs, including the IS61DDB21M18A-300B4L, are characterized by their ability to store and retrieve data quickly and accurately. These components are vital for systems that require frequent data access, such as computing and communication devices. The IS61DDB21M18A-300B4L stands out with its low latency, high bandwidth, and reliable operation under varying conditions.
Applications of the IS61DDB21M18A-300B4L span across industries, including telecommunications, medical devices, and industrial automation. For example, it is used in servers for data centers, ensuring fast and secure data handling, and in medical equipment where precision and reliability are paramount. The IS61DDB21M18A-300B4L is a trusted choice for professionals seeking high-quality Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 300 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.71V ~ 1.89V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-LFBGA (13x15)
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