IS61DDB21M36C-300M3L
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
IC SRAM 36MBIT PARALLEL 165LFBGA
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Experience top-tier performance with the IS61DDB21M36C-300M3L Memory IC from ISSI, Integrated Silicon Solution Inc, a standout in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the requirements of advanced electronic systems. Its innovative architecture ensures efficiency and reliability.
The IS61DDB21M36C-300M3L exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The IS61DDB21M36C-300M3L provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The IS61DDB21M36C-300M3L is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II
- Memory Size: 36Mb (1M x 36)
- Memory Interface: Parallel
- Clock Frequency: 300 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8.4 ns
- Voltage - Supply: 1.71V ~ 1.89V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-LFBGA (13x15)
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