IS61QDP2B21M18A-333M3L
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
IC SRAM 18MBIT PARALLEL 165LFBGA
$44.15
Available to order
Reference Price (USD)
105+
$41.10752
Exquisite packaging
Discount
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The IS61QDP2B21M18A-333M3L by ISSI, Integrated Silicon Solution Inc is a high-efficiency Memory IC designed for modern electronic applications. As part of the Memory category, this IC delivers exceptional data storage and retrieval performance, catering to the needs of high-speed systems. Its advanced design ensures reliability and longevity.
Memory ICs like the IS61QDP2B21M18A-333M3L are renowned for their high-speed data access and compact sizes. These components are critical for applications that demand quick and accurate memory operations. The IS61QDP2B21M18A-333M3L stands out with its low power usage and high bandwidth, making it suitable for energy-sensitive devices.
The IS61QDP2B21M18A-333M3L finds applications in sectors such as healthcare, entertainment, and telecommunications. For instance, it is used in medical imaging devices that require fast data processing and in gaming consoles for seamless performance. Its adaptability and high performance make the IS61QDP2B21M18A-333M3L a preferred Memory IC for diverse uses.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QUADP
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8.4 ns
- Voltage - Supply: 1.71V ~ 1.89V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-LFBGA (15x17)
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