ISC036N04NM5ATMA1
Infineon Technologies
Infineon Technologies
40V 3.6M OPTIMOS MOSFET SUPERSO8
$1.40
Available to order
Reference Price (USD)
1+
$1.40000
500+
$1.386
1000+
$1.372
1500+
$1.358
2000+
$1.344
2500+
$1.33
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the ISC036N04NM5ATMA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the ISC036N04NM5ATMA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 23µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 63W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
IRFR6215TRRPBF
Diodes Incorporated
DMN2015UFDE-7
STMicroelectronics
STB80NF55L-08-1
onsemi
FQD5N60CTM-WS
Toshiba Semiconductor and Storage
SSM3J331R,LF
onsemi
NVMFS5C456NT1G
onsemi
NDUL03N150CG
Rectron USA
RM30P55LD
Rohm Semiconductor
SCT4036KEC11
Toshiba Semiconductor and Storage