ISL6609IRZ
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HALF-BRIDGE 8QFN
$2.35
Available to order
Reference Price (USD)
1+
$2.21000
10+
$1.98800
25+
$1.87520
100+
$1.59750
300+
$1.50000
500+
$1.31250
1,000+
$1.08750
2,500+
$1.01250
5,000+
$0.97500
Exquisite packaging
Discount
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Optimize your power systems with Renesas Electronics America Inc's ISL6609IRZ, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The ISL6609IRZ demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Last Time Buy
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 5.5V
- Logic Voltage - VIL, VIH: 1V, 2V
- Current - Peak Output (Source, Sink): -, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36 V
- Rise / Fall Time (Typ): 8ns, 8ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VQFN Exposed Pad
- Supplier Device Package: 8-QFN (3x3)
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