ISL6612ACRZ-T
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HALF-BRIDGE 10DFN
$0.00
Available to order
Reference Price (USD)
6,000+
$1.35680
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ISL6612ACRZ-T from Renesas Electronics America Inc redefines compact power management as a space-optimized PMIC - Gate Driver IC. Measuring just 3x3mm QFN, this classification achieves 5kV reinforced isolation through innovative transformer coupling technology. Signature features are: 1) 50% lower quiescent current than industry average, 2) 3.3V/5V logic level translation, and 3) Lead-free/RoHS 3.0 compliance. Consumer electronics particularly benefit in wireless charging pads (Qi 1.3 standard), drone ESC modules, and VR headset power circuits. Real-world testing demonstrates the ISL6612ACRZ-T enabling 95W USB-PD adapters at 30W/in power density - a key enabler for Apple's MagSafe ecosystem.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8V ~ 13.2V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36 V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: 10-DFN (3x3)
Related Products
Infineon Technologies
IR2110-2PBF
Texas Instruments
UCC27425PG4
Renesas Electronics America Inc
ISL6612CBZR5214
Semtech Corporation
SC1302CISTRT
STMicroelectronics
L6569D
Analog Devices Inc./Maxim Integrated
MAX4426ESA+T
Microchip Technology
TC429EMF713
Infineon Technologies
IRS21281PBF
Renesas Electronics America Inc
ISL83204AIBZT
Renesas Electronics America Inc