ISL6613IRZR5214
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HALF-BRIDGE 10DFN
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ISL6613IRZR5214 from Renesas Electronics America Inc is a high-performance PMIC - Gate Driver IC designed for precision control in power management applications. This integrated circuit excels in driving MOSFETs and IGBTs with exceptional speed and reliability, making it ideal for high-frequency switching systems. Key features include robust noise immunity, low propagation delay, and adaptive dead-time control to optimize efficiency. These gate drivers are widely used in industrial motor controls, solar inverters, and electric vehicle powertrains. For instance, the ISL6613IRZR5214 ensures seamless operation in servo drives requiring nanosecond-level response times. Its compact design and thermal protection mechanisms further enhance system longevity in demanding environments like factory automation and renewable energy systems.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8V ~ 13.2V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36 V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: 10-DFN (3x3)
Related Products
Microchip Technology
MIC5016BWM
Analog Devices Inc.
LT1162CN#PBF
Semtech Corporation
SC1210STRT
Microchip Technology
MIC4425CN
Microchip Technology
MIC4423BWM TR
STMicroelectronics
L6386E
Renesas Electronics America Inc
ISL6614BIRZ
Infineon Technologies
AUIRS2301S
NXP USA Inc.
MC33883DW
Renesas Electronics America Inc