ISL89165FBEBZ
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR LOW-SIDE 8SOIC
$4.97
Available to order
Reference Price (USD)
1+
$3.87000
10+
$3.47500
98+
$3.28500
196+
$2.84699
294+
$2.70099
588+
$2.42361
1,078+
$2.04400
2,548+
$1.94180
5,096+
$1.86880
Exquisite packaging
Discount
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Engineered for mission-critical applications, Renesas Electronics America Inc's ISL89165FBEBZ PMIC - Gate Driver IC delivers military-grade reliability. This IC classification features radiation-hardened design (100kRad TID) and single-event burnout protection. Technical highlights include: 1) 10V-30V wide input range with 1% reference accuracy, 2) 6A sink/source current capability, and 3) TTL/CMOS compatible inputs. The ISL89165FBEBZ proves indispensable in nuclear reactor control rods, Mars rover motor controllers, and hypersonic missile guidance systems. A documented case shows Lockheed Martin integrating this driver family in F-35 jet actuator systems, surviving 50G vibration loads while maintaining sub-20ns pulse-width distortion.
Specifications
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 16V
- Logic Voltage - VIL, VIH: 1.85V, 3.15V
- Current - Peak Output (Source, Sink): 6A, 6A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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