ISL9V5036S3ST_SB82170
onsemi
onsemi
INTEGRATED CIRCUIT
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Upgrade your power management systems with the ISL9V5036S3ST_SB82170 Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the ISL9V5036S3ST_SB82170 provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose ISL9V5036S3ST_SB82170 for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 390 V
- Current - Collector (Ic) (Max): 46 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
- Power - Max: 250 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: 32 nC
- Td (on/off) @ 25°C: -/10.8µs
- Test Condition: 300V, 1kOhm, 5V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)
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