ISP25DP06LMSATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 1.9A SOT223
$0.38
Available to order
Reference Price (USD)
1+
$0.37940
500+
$0.375606
1000+
$0.371812
1500+
$0.368018
2000+
$0.364224
2500+
$0.36043
Exquisite packaging
Discount
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Optimize your power electronics with the ISP25DP06LMSATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the ISP25DP06LMSATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
- Vgs(th) (Max) @ Id: 2V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223
- Package / Case: TO-261-4, TO-261AA
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