IST006N04NM6AUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 58A/475A HSOF-5
$4.23
Available to order
Reference Price (USD)
1+
$4.23000
500+
$4.1877
1000+
$4.1454
1500+
$4.1031
2000+
$4.0608
2500+
$4.0185
Exquisite packaging
Discount
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The IST006N04NM6AUMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IST006N04NM6AUMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 475A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
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