ISZ0803NLSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 7.7A/37A TSDSON
$1.37
Available to order
Reference Price (USD)
1+
$1.37000
500+
$1.3563
1000+
$1.3426
1500+
$1.3289
2000+
$1.3152
2500+
$1.3015
Exquisite packaging
Discount
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The ISZ0803NLSATMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the ISZ0803NLSATMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 18µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-26
- Package / Case: 8-PowerTDFN
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