IV1Q12050T4
Inventchip
Inventchip
SIC MOSFET, 1200V 50MOHM, TO-247
$40.34
Available to order
Reference Price (USD)
1+
$40.34000
500+
$39.9366
1000+
$39.5332
1500+
$39.1298
2000+
$38.7264
2500+
$38.323
Exquisite packaging
Discount
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Upgrade your designs with the IV1Q12050T4 by Inventchip, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IV1Q12050T4 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 344W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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