IV1Q12160T4
Inventchip
Inventchip
SIC MOSFET, 1200V 160MOHM, TO-24
$19.64
Available to order
Reference Price (USD)
1+
$19.64000
500+
$19.4436
1000+
$19.2472
1500+
$19.0508
2000+
$18.8544
2500+
$18.658
Exquisite packaging
Discount
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The IV1Q12160T4 from Inventchip redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IV1Q12160T4 offers the precision and reliability you need. Trust Inventchip to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id: 2.9V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 138W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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