IX4351NETR
IXYS Integrated Circuits Division
IXYS Integrated Circuits Division
MOSFET IGBT SIC DRIVER 9A
$3.25
Available to order
Reference Price (USD)
1+
$3.25000
500+
$3.2175
1000+
$3.185
1500+
$3.1525
2000+
$3.12
2500+
$3.0875
Exquisite packaging
Discount
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The IX4351NETR PMIC - Gate Driver by IXYS Integrated Circuits Division sets new benchmarks for intelligent power device control. As part of the ICs family, this solution incorporates digital input interfaces (PWM, SPI) alongside analog fault monitoring pins. Its standout attributes are: 1) 12ns typical propagation delay matching, 2) -40 C to +150 C junction temperature range, and 3) configurable soft-turnoff during overcurrent events. Dominant market applications encompass 5G base station PAs, MRI gradient amplifiers, and hydrogen fuel cell converters. A case in point: Siemens' latest wind turbine converters leverage IX4351NETR-equivalent drivers to achieve 99.2% availability in offshore conditions, thanks to conformal coating against salt spray corrosion.
Specifications
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, SiC MOSFET
- Voltage - Supply: -10V ~ 25V
- Logic Voltage - VIL, VIH: 1V, 2.2V
- Current - Peak Output (Source, Sink): 9A, 9A
- Input Type: CMOS, TTL
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 16-SOIC-EP
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