IXA20I1200PB
IXYS
IXYS
IGBT 1200V 33A 130W TO220
$4.82
Available to order
Reference Price (USD)
50+
$4.15800
Exquisite packaging
Discount
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Discover the IXA20I1200PB Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXA20I1200PB ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXA20I1200PB for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 38 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 165 W
- Switching Energy: 1.65mJ (on), 1.7mJ (off)
- Input Type: Standard
- Gate Charge: 47 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 15A, 56Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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