IXDD630MYI
IXYS Integrated Circuits Division
IXYS Integrated Circuits Division
IC GATE DRVR LOW-SIDE TO263-5
$9.56
Available to order
Reference Price (USD)
1+
$7.78000
10+
$6.99800
50+
$6.37560
100+
$5.75350
250+
$5.28700
500+
$4.82050
1,000+
$4.19850
Exquisite packaging
Discount
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Optimize your power systems with IXYS Integrated Circuits Division's IXDD630MYI, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The IXDD630MYI demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 9V ~ 35V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 30A, 30A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 11ns, 11ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
- Supplier Device Package: TO-263-5
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