IXDP20N60B
IXYS
IXYS
IGBT 600V 32A 140W TO220AB
$0.00
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Reference Price (USD)
50+
$3.61460
Exquisite packaging
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Upgrade your power management systems with the IXDP20N60B Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXDP20N60B provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXDP20N60B for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 32 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
- Power - Max: 140 W
- Switching Energy: 900µJ (on), 400µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: -
- Test Condition: 300V, 20A, 22Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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