IXDT30N120
IXYS
IXYS
IGBT 1200V 60A 300W TO268AA
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with the IXDT30N120 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXDT30N120 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A
- Power - Max: 300 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
Related Products
STMicroelectronics
STGB20NB32LZ
Infineon Technologies
IKP03N120H2
Infineon Technologies
IRG4BC20F-SPBF
Infineon Technologies
IRG8P75N65UD1-EPBF
IXYS
IXGK64N60B3D1
Infineon Technologies
IRGS4610DTRRPBF
IXYS
IXGR24N60C
Infineon Technologies
IRGS4620DPBF
Infineon Technologies
IRG4BC30UDPBF
onsemi