IXEN60N120
IXYS
IXYS
IGBT MOD 1200V 100A 445W SOT227B
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Engineered for excellence, the IXEN60N120 IGBT module by IXYS sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The IXEN60N120 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. IXYS continues to lead the IGBT module revolution with innovations like the IXEN60N120.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 445 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
- Current - Collector Cutoff (Max): 800 µA
- Input Capacitance (Cies) @ Vce: 3.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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