IXER35N120D1
IXYS
IXYS
IGBT 1200V 50A 200W TO247
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The IXER35N120D1 by IXYS is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IXER35N120D1 delivers robust performance. IXYS's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IXER35N120D1 into your designs for optimal power control.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 35A
- Power - Max: 200 W
- Switching Energy: 5.4mJ (on), 2.6mJ (off)
- Input Type: Standard
- Gate Charge: 150 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 35A, 39Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISOPLUS247™
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