IXFA110N15T2
IXYS
IXYS
MOSFET N-CH 150V 110A TO263
$6.69
Available to order
Reference Price (USD)
800+
$2.47500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXFA110N15T2 from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXFA110N15T2 offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Panjit International Inc.
PJP6NA40_T0_00001
Infineon Technologies
IPB054N06N3GATMA1
Alpha & Omega Semiconductor Inc.
AOI4185
onsemi
FDMS7680
Infineon Technologies
IPP026N10NF2SAKMA1
Toshiba Semiconductor and Storage
TK3R1A04PL,S4X
Infineon Technologies
IPB026N06NATMA1
Fairchild Semiconductor
HUF75842S3ST
Vishay Siliconix
IRFU9220PBF
Infineon Technologies