Shopping cart

Subtotal: $0.00

IXFA26N30X3

IXYS
IXFA26N30X3 Preview
IXYS
MOSFET N-CH 300V 26A TO263AA
$4.87
Available to order
Reference Price (USD)
1+
$3.36000
50+
$2.70000
100+
$2.46000
500+
$1.99200
1,000+
$1.68000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA (IXFA)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Diodes Incorporated

DMN2320UFB4-7B

Diodes Incorporated

DMN24H3D5L-13

Fairchild Semiconductor

FQPF13N10

Infineon Technologies

IPB80P03P4L04ATMA1

Toshiba Semiconductor and Storage

TK40S06N1L,LQ

Microchip Technology

TN2540N3-G-P002

NXP USA Inc.

BUK9516-55A,127

Toshiba Semiconductor and Storage

SSM3J356R,LXHF

Top