Shopping cart

Subtotal: $0.00

IXFA5N100P-TRL

IXYS
IXFA5N100P-TRL Preview
IXYS
MOSFET N-CH 1000V 5A TO263
$3.56
Available to order
Reference Price (USD)
1+
$3.55723
500+
$3.5216577
1000+
$3.4860854
1500+
$3.4505131
2000+
$3.4149408
2500+
$3.3793685
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Diodes Incorporated

DMN80H2D0SCTI

Fairchild Semiconductor

FQPF19N20T

Fairchild Semiconductor

IRFR210BTM

Vishay Siliconix

SI1427EDH-T1-BE3

Infineon Technologies

IPD60R600CP

Nexperia USA Inc.

PMPB12UNEX

Fairchild Semiconductor

FQP19N10L

Infineon Technologies

IPB35N10S3L26ATMA1

Top