IXFB132N50P3
IXYS
IXYS
MOSFET N-CH 500V 132A PLUS264
$24.46
Available to order
Reference Price (USD)
1+
$18.22000
25+
$15.31800
100+
$14.07600
500+
$12.00600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IXFB132N50P3 single MOSFET from IXYS. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust IXYS's IXFB132N50P3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1890W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264™
- Package / Case: TO-264-3, TO-264AA
Related Products
Renesas Electronics America Inc
2SK3668-ZK-E1-AY
Microchip Technology
APT10035JFLL
Infineon Technologies
IPD60R1K0PFD7SAUMA1
Infineon Technologies
IRF9328TRPBF
Vishay Siliconix
SIR800ADP-T1-GE3
onsemi
FDMS7556S
IXYS
IXTP52P10P
Vishay Siliconix
SI2343DS-T1-BE3
Diodes Incorporated
DMP2067LVT-7
Vishay Siliconix