IXFB70N100X
IXYS
IXYS
MOSFET N-CH 1000V 70A PLUS264
$52.70
Available to order
Reference Price (USD)
1+
$38.46000
25+
$32.69120
100+
$30.38340
Exquisite packaging
Discount
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Meet the IXFB70N100X by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXFB70N100X stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 6V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 9160 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1785W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264™
- Package / Case: TO-264-3, TO-264AA
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