IXFH10N100
IXYS
IXYS
MOSFET N-CH 1KV 10A TO-247AD
$12.96
Available to order
Reference Price (USD)
1+
$12.96300
500+
$12.83337
1000+
$12.70374
1500+
$12.57411
2000+
$12.44448
2500+
$12.31485
Exquisite packaging
Discount
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Meet the IXFH10N100 by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXFH10N100 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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