IXFH18N100Q3
IXYS
IXYS
MOSFET N-CH 1000V 18A TO247AD
$20.83
Available to order
Reference Price (USD)
30+
$11.98800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IXFH18N100Q3 single MOSFET from IXYS. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust IXYS's IXFH18N100Q3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4890 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
Related Products
Infineon Technologies
BSC889N03LSG
onsemi
NTMFS4C032NT1G
Diodes Incorporated
DMTH10H025SK3-13
Vishay Siliconix
SIHA11N80E-GE3
Vishay Siliconix
SQM120N10-3M8_GE3
Infineon Technologies
IPD60R1K0CEAUMA1
STMicroelectronics
STB30N80K5
Panjit International Inc.
PJA3461_R1_00001
Fairchild Semiconductor
FDB8870
Infineon Technologies