IXFH36N55Q2
IXYS
IXYS
MOSFET N-CH 550V 36A TO247AD
$0.00
Available to order
Reference Price (USD)
30+
$14.33767
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IXFH36N55Q2 by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXFH36N55Q2 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 560W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IRF7241TR
Infineon Technologies
IPB100N06S2L05ATMA1
Vishay Siliconix
SIA419DJ-T1-GE3
Infineon Technologies
IPA60R800CEXKSA1
Alpha & Omega Semiconductor Inc.
AON6518
onsemi
NVMFS5C450NLT3G
Infineon Technologies
IPB90N06S4L04ATMA1
Toshiba Semiconductor and Storage
TPC6009-H(TE85L,FM
Alpha & Omega Semiconductor Inc.
AOTF8T50P
Infineon Technologies