IXFH70N30Q3
IXYS
IXYS
MOSFET N-CH 300V 70A TO247AD
$18.35
Available to order
Reference Price (USD)
30+
$11.98800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IXFH70N30Q3 from IXYS, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IXFH70N30Q3 ensures reliable performance in demanding environments. Upgrade your circuit designs with IXYS's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 54mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
Related Products
Infineon Technologies
BSP125H6327XTSA1
Diodes Incorporated
DMP3018SFV-13
Wolfspeed, Inc.
C3M0160120D
Microchip Technology
APT38F80B2
STMicroelectronics
STF45N65M5
Rohm Semiconductor
R6504END3TL1
Rohm Semiconductor
RQ6E045SNTR
STMicroelectronics
STB24N60M6
Panjit International Inc.
PJQ5424_R2_00001
onsemi