IXFJ20N85X
IXYS
IXYS
MOSFET N-CH 850V 9.5A ISO TO247
$10.56
Available to order
Reference Price (USD)
1+
$9.33000
30+
$7.64667
120+
$6.90050
510+
$5.78151
1,020+
$5.22200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IXFJ20N85X by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXFJ20N85X stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 850 V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISO TO-247-3
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SIHB18N60E-GE3
Microchip Technology
MSC060SMA070B4
STMicroelectronics
STL12N65M2
Diodes Incorporated
DMTH6004LPSQ-13
Vishay Siliconix
SQ2351ES-T1_GE3
Infineon Technologies
BSS84PH6433XTMA1
Infineon Technologies
IPT60R050G7XTMA1
Vishay Siliconix
SQD40061EL_GE3
Panjit International Inc.
PJL9412_R2_00001
Rohm Semiconductor