IXFK21N100Q
IXYS
IXYS
MOSFET N-CH 1000V 21A TO264AA
$0.00
Available to order
Reference Price (USD)
25+
$18.25960
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IXFK21N100Q single MOSFET from IXYS. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IXFK21N100Q combines cutting-edge technology with IXYS's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
Related Products
onsemi
FDP2570
IXYS
IXTU1R4N60P
onsemi
NVMFS5C423NLWFT1G
Infineon Technologies
IRF2903ZSTRLP
MaxLinear, Inc.
XR46000ESE
onsemi
FDMC8884-F126
Nexperia USA Inc.
BUK98150-55A/CU135
Infineon Technologies
IRF8327STR1PBF
Vishay Siliconix
SI7784DP-T1-GE3
Infineon Technologies