IXFL38N100Q2
IXYS
IXYS
MOSFET N-CH 1000V 29A ISOPLUS264
$0.00
Available to order
Reference Price (USD)
1+
$43.85000
25+
$37.92000
100+
$35.55000
Exquisite packaging
Discount
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The IXFL38N100Q2 from IXYS sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to IXYS's IXFL38N100Q2 for their critical applications.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS264™
- Package / Case: TO-264-3, TO-264AA
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