IXFN106N20
IXYS
IXYS
MOSFET N-CH 200V 106A SOT-227B
$0.00
Available to order
Reference Price (USD)
1+
$25.20000
10+
$23.31000
30+
$21.42000
100+
$19.90800
250+
$18.27000
500+
$17.38800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXFN106N20 by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXFN106N20 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 521W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Infineon Technologies
IRL3716SPBF
NXP USA Inc.
PHB129NQ04LT,118
Fairchild Semiconductor
HUFA75332S3S
Infineon Technologies
IRF8113TRPBF-1
Infineon Technologies
BSS315PL6327HTSA1
onsemi
NVMFS6B25NLT3G
Infineon Technologies
IRLI2910
NXP USA Inc.
PSMN8R5-108ESQ
onsemi
FQD7N20LTF
Renesas Electronics America Inc