IXFN38N80Q2
IXYS
IXYS
MOSFET N-CH 800V 38A SOT227B
$0.00
Available to order
Reference Price (USD)
10+
$34.22500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXFN38N80Q2 by IXYS is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IXFN38N80Q2 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 8340 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 735W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Infineon Technologies
IRF6710S2TR1PBF
Sanken
SKI03063
Vishay Siliconix
SUD42N03-3M9P-GE3
onsemi
NTF3055-160T3LF
Infineon Technologies
IPB065N06LG
Infineon Technologies
IRFR3418PBF
Infineon Technologies
BSS126 E6327
Vishay Siliconix
SUP85N03-04P-E3
onsemi
NTB75N06LG
STMicroelectronics