IXFN72N55Q2
IXYS
IXYS
MOSFET N-CH 550V 72A SOT-227B
$0.00
Available to order
Reference Price (USD)
10+
$36.42700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IXFN72N55Q2 by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXFN72N55Q2 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550 V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 72mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 890W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Diodes Incorporated
ZVP1320A
Rohm Semiconductor
RDD020N60TL
onsemi
FDB86360_SN00307
STMicroelectronics
STD30NE06LT4
Infineon Technologies
IRF9Z24NSTRL
onsemi
HUF76429D3S
Vishay Siliconix
IRFL9110TR
onsemi
MCH6445-TL-W
IXYS
IXTH44N30T
Infineon Technologies