IXFP7N60P3
IXYS
IXYS
MOSFET N-CH 600V 7A TO220AB
$0.00
Available to order
Reference Price (USD)
50+
$1.85000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXFP7N60P3 by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXFP7N60P3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.15Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Nexperia USA Inc.
PMPB50ENEAX
onsemi
5LN01SP-AC
Vishay Siliconix
SQ7414AENW-T1_GE3
Panasonic Electronic Components
MTM231232LBF
onsemi
FDD8445-F085P
Vishay Siliconix
IRFL110PBF
Rohm Semiconductor
RSY200N05TL
Vishay Siliconix
IRFBC20LPBF
Infineon Technologies
IPD50N06S3L-06
onsemi