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IXFR21N100Q

IXYS
IXFR21N100Q Preview
IXYS
MOSFET N-CH 1000V 18A ISOPLUS247
$0.00
Available to order
Reference Price (USD)
30+
$17.01700
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 10.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 350W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247™
  • Package / Case: TO-247-3

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